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| PD- 95273 SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRF7464PBF HEXFET(R) Power MOSFET VDSS 200V RDS(on) max 0.73 ID 1.2A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 1.2 1.0 10 2.5 0.02 30 6.8 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 8 www.irf.com 1 9/21/04 IRF7464PBF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- 0.23 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.73 VGS = 10V, ID = 0.72A 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 1.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 9.5 2.5 4.6 11 9.5 18 15 280 52 14 330 25 48 Max. Units Conditions --- S VDS = 50V, ID = 0.72A 14 ID = 0.72A 3.8 nC VDS = 160V 6.9 VGS = 10V, --- VDD = 100V --- ID = 0.72A ns --- RG = 24 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 68 1.2 0.25 Units mJ A mJ Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 50 Units C/W Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 60 130 2.3 A 10 1.3 90 200 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.72A, VGS = 0V TJ = 25C, IF = 0.72A di/dt = 100A/s D S 2 www.irf.com IRF7464PBF 10 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 10 I D , Drain-to-Source Current (A) 1 I D , Drain-to-Source Current (A) VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 6.0V 0.1 1 6.0V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 3.0 TJ = 150 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 1.2A I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25 C 1 1.5 1.0 0.5 0.1 6.0 V DS = 50V 20s PULSE WIDTH 6.5 7.0 7.5 8.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7464PBF 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 0.72A VDS = 160V VDS = 100V VDS = 40V 16 1000 C, Capacitance(pF) Ciss 100 12 Coss 10 8 Crss 4 1 1 10 100 1000 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 13 8 10 12 14 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C I D , Drain Current (A) 10 10us 1 100us 1 1ms TJ = 25 C 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 TA = 25 C TJ = 150 C Single Pulse 10 100 10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7464PBF 1.6 VDS VGS 1.2 RD ID , Drain Current (A) RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -V DD 0.8 0.4 Fig 10a. Switching Time Test Circuit VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7464PBF RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () 0.70 0.70 VGS = 10V 0.60 0.60 ID = 0.72A 0.50 0.0 1.0 2.0 3.0 4.0 5.0 ID , Drain Current (A) 0.50 7 8 9 10 11 12 13 14 15 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD 200 VG EAS , Single Pulse Avalanche Energy (mJ) VGS 3mA TOP 160 Charge IG ID BOTTOM ID 0.5A 0.8A 1.2A Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 120 80 15V V(BR)DSS tp VDS L 40 DRIVER RG 20V D.U.T IAS + V - DD 0 25 50 75 100 125 150 A I AS tp 0.01 Starting TJ , Junction Temperature ( C) Fig 14a&b. Unclamped Inductive Test circuit and Waveforms Fig 14c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7464PBF SO-8 Package Outline D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUT LINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS. MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS. MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGTH OF LEAD FOR S OLDERING TO A SUBST RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASS EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IF IER LOGO XXXX F 7101 www.irf.com 7 IRF7464PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 94mH RG = 25, IAS = 1.2A. ISD 0.72A, di/dt 130A/s, VDD V(BR)DSS, TJ 150C When mounted on 1 inch square copper board, t<10 sec Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com |
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